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| STC1015 PNP Silicon Transistor STC1015 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -60 -50 -5 -150 625 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h * FE Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K Min. Typ. Max. -60 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10 Unit V V V A A V MHz pF dB VCE(sat) fT Cob NF *: hFE rank / A : 70~140, B : 120~240, C : 200~400, D : 300~700. 2 STC1015 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC 3 |
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